JPS6260799B2 - - Google Patents
Info
- Publication number
- JPS6260799B2 JPS6260799B2 JP58175352A JP17535283A JPS6260799B2 JP S6260799 B2 JPS6260799 B2 JP S6260799B2 JP 58175352 A JP58175352 A JP 58175352A JP 17535283 A JP17535283 A JP 17535283A JP S6260799 B2 JPS6260799 B2 JP S6260799B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric
- film
- film layer
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 44
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000002131 composite material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 241001175904 Labeo bata Species 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910019695 Nb2O6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175352A JPS6068589A (ja) | 1983-09-22 | 1983-09-22 | 薄膜発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175352A JPS6068589A (ja) | 1983-09-22 | 1983-09-22 | 薄膜発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6068589A JPS6068589A (ja) | 1985-04-19 |
| JPS6260799B2 true JPS6260799B2 (en]) | 1987-12-17 |
Family
ID=15994564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58175352A Granted JPS6068589A (ja) | 1983-09-22 | 1983-09-22 | 薄膜発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068589A (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63994A (ja) * | 1986-06-18 | 1988-01-05 | 松下電器産業株式会社 | 薄膜電場発光素子の製造法 |
-
1983
- 1983-09-22 JP JP58175352A patent/JPS6068589A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6068589A (ja) | 1985-04-19 |
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